dm th6004sk3q document number: ds 37557 rev. 1 - 2 1 of 7 www.diodes.com march 2016 ? diodes incorporated dm th6004sk3q new product advanced information 60v 175c n - channel enhancement mode mosfet product summary b v dss r ds(on) max q g typ i d max t c = + 25 c (note 10) 60 v 3.8 m? @ v gs = 10 v 95.4nc 100a description and applications this mosfet is designed to meet the stringent requirements of a utomotive applications. it is qualified to aecq101, s upported by a ppap and is ideal for use in : ? engine management systems ? body control electronics ? dc - dc converters ? motor control features ? rated to + 175 c C ideal for high ambient temperature environments ? 1 00% unclamped inductive switching C ensures more reli able and robust end applicati on ? low r ds(on) C minimizes power los ses ? low q g C minimizes switching los ses ? lead - free finish ; rohs c ompliant (notes 1 & 2) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: to25 2 (dpak) ? case m aterial: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C matte tin annealed over copper leadframe . solderable per mil - std - 202, method 208 ? weight: 0. 33 grams ( approximate ) ordering information (note 5 ) part number case packaging dm t h 6 0 04 s k3 q - 13 to252 (dpak) 2 , 5 00/tape & reel note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec - q10 1 qualified and are ppap capable. refer to http://www.diodes.co m/quality/product_compliance_definitions/. 5. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information internal schematic top view pin out top view to252 (dpak) t6004s yyww =manufacturer s marking t6004s = product type marking code yyww = date code marking yy = last digit of year (ex: 1 6 = 201 6 ) ww = week code (01 to 53) d s g g s d d green
dm th6004sk3q document number: ds 37557 rev. 1 - 2 2 of 7 www.diodes.com march 2016 ? diodes incorporated dm th6004sk3q new product advanced information maximum ratings ( @ t a = + 25c , unless otherwise specified .) characteristic symbol value units drain - source voltage v dss 60 v gate - source voltage v gss 20 v continuous drain current (note 7 ) t c = +25c (note 10 ) i d 100 a t c = + 10 0c 75 maximum body diode forward current (note 7 ) t c = + 25 c i s 100 a pulsed drain current ( 10 s pulse, duty cy cle = 1% ) i dm 1 50 a avalanche current, l = 0. 2 mh i as 45 a avalanche energy, l = 0. 2 mh e as 2 00 mj thermal characteristics characteristic symbol value units total power dissipation (note 6 ) t a = +25c p d 3.9 w thermal resistance, junction to ambient (note 6 ) r ja 38 c/w total power dissipation (note 7 ) t c = +25c p d 180 w thermal resistance, junction to case (note 7 ) r j c 0.8 c/w operating and storage temperature range t j, t stg - 55 to +1 75 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 6 0 ? ? gs = 0v, i d = 1m a zero gate voltage drain current i dss ? ? ds = 48 v, v gs = 0v gate - source leakage i gss ? ? gs = 2 0 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) 2 ? ds = v gs , i d = 250 a static drain - source on - resistance r ds(on) ? ? gs = 10 v, i d = 90 a diode forward voltage v sd ? gs = 0v, i s = 20 a dynamic characteristics (note 9 ) input capacitance c iss ? ? ds = 30 v, v gs = 0v , f = 1 mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g ? ? ? ds = 30 v, i d = 90 a , v gs = 10 v gate - source charge q gs ? ? gd ? ? d( on ) ? ? dd = 30 v, v gs = 10 v, i d = 90 a , r g = 3.5 ? r ? ? d( off ) ? ? f ? ? ? ? rr ? ? f = 50 a , d i /d t = 100a/ rr ? ? ? ? notes: 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper pad layout . 7. thermal resistance from junction to soldering point (on the exposed drain pad). 8 . short duration pulse test used to minimize self - heating effect . 9 . guaranteed by design. not subject to production testing . 10. package limited.
dm th6004sk3q document number: ds 37557 rev. 1 - 2 3 of 7 www.diodes.com march 2016 ? diodes incorporated dm th6004sk3q new product advanced information v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 30.0 60.0 90.0 120.0 150.0 0 0.5 1 1.5 2 2.5 3 v = 4.5v gs v = 5.0v gs v = 6.0v gs v = 8.0v gs v = 10v gs v = 7.0v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a t = 175c a 0.10 1 10 100 1000 0 30 60 90 120 150 v = 4.5v gs v = 10v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage 0 2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20 i = 90a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage 0 1 2 3 4 5 6 7 8 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs t = 175c a r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 v = v i = 90a gs d 10
dm th6004sk3q document number: ds 37557 rev. 1 - 2 4 of 7 www.diodes.com march 2016 ? diodes incorporated dm th6004sk3q new product advanced information ss 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 90 100 v gs (v) q g (nc) f igure 11 gate charge v ds = 30v, i d = 90a t , junction temperature ( c) figure 7 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 -50 -25 0 25 50 75 100 125 150 175 v = v i = 90a gs d 10 t , junction temperature ( c) figure 8 gate threshold variation vs. ambient temperature j ? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 150 175 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = -55c a 0 30 60 90 120 150 0 0.3 0.6 0.9 1.2 1.5 t = 25c a t = 85c a t = 125c a t = 150c a t = 175c a 10 100 1000 10000 0 5 10 15 20 25 30 35 40 45 50 55 60 c iss c oss c rss f=1mhz c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 10 typical junction capacitance e a s a v a l a n c h e e n e r g y ( m j ) figure 12, single-pulsed avalanche rating l inductor (h) i a s a v a l a n c h e c u r r e n t ( a ) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0.1 1 10 100 0 10 20 30 40 50 60 70 80 90 100
dm th6004sk3q document number: ds 37557 rev. 1 - 2 5 of 7 www.diodes.com march 2016 ? diodes incorporated dm th6004sk3q new product advanced information 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 r(t), transient thermal resistance t1, pulse duration time (sec) figure 14 transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 d=0.7 r jc (t) = r(t) * r jc r jc = 0.8 d , drain current (a) v ds , drain - source voltage (v) f igure 13 soa, safe operation area p w =10ms p w =100 s r ds(on) limited p w =1ms p w =100ms t j(max) = 175 c = 25 gs = 10v p w =1s p w =10 s p w =1 s
dm th6004sk3q document number: ds 37557 rev. 1 - 2 6 of 7 www.diodes.com march 2016 ? diodes incorporated dm th6004sk3q new product advanced information package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. to252 (dpak) dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0. 64 0. 88 0. 7 83 b2 0. 7 6 1.14 0. 95 b3 5.21 5.46 5.3 3 c 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 C C e C C e 6.45 6.70 6.58 e1 4.32 C C h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 C all dimensions in mm dimensions value (in mm) c 4.572 x 1.0 60 x1 5.632 y 2.6 0 0 y1 5.700 y 2 10.700 to252 (dpak) to252 (dpak) b3 e l3 d l4 b2(2x) b(3x) e c a 71 h seating plane a1 gauge plane a 0.508 l 2.74ref d1 a2 e1 x1 x y2 y1 y c
dm th6004sk3q document number: ds 37557 rev. 1 - 2 7 of 7 www.diodes.com march 2016 ? diodes incorporated dm th6004sk3q new product advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of th is document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreig n trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems witho ut the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices o r systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect it s safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2 01 6 , diodes incorporated www.diodes.com
|
